Silicon Carbide (SiC)
VerifiedsemiconductorSilicon carbide (SiC) is a ceramic compound combining silicon and carbon in a 1:1 ratio, engineered as a wide-bandgap semiconductor with exceptional hardness and thermal stability. It is widely deployed in high-temperature power electronics (MOSFETs and Schottky diodes), abrasive applications, refractories for furnace linings, and emerging automotive/renewable energy inverters where its superior thermal conductivity and thermal shock resistance outperform traditional silicon. Engineers select SiC over conventional semiconductors when operating environments exceed 200°C or when high switching frequencies and power density are critical, though cost and manufacturing maturity remain considerations relative to established Si technology.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Hardness (Vickers)(HV) | — | HV | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Young's Modulus(E) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | — | K | — | — | |
Specific Heat Capacity(Cp) | — | J/(kg·K) | — | — | |
Thermal Conductivity(k) | — | W/(m·K) | — | — | |
Thermal Conductivity vs Temperature(k(T)) | Curve (7 pts) | W/(m·K) | — | — | |
Coefficient of Thermal Expansion(α (CTE)) | — | 1/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — |