Silicon carbide (SiC) is a ceramic compound combining silicon and carbon in a 1:1 ratio, engineered as a wide-bandgap semiconductor with exceptional hardness and thermal stability. It is widely deployed in high-temperature power electronics (MOSFETs and Schottky diodes), abrasive applications, refractories for furnace linings, and emerging automotive/renewable energy inverters where its superior thermal conductivity and thermal shock resistance outperform traditional silicon. Engineers select SiC over conventional semiconductors when operating environments exceed 200°C or when high switching frequencies and power density are critical, though cost and manufacturing maturity remain considerations relative to established Si technology.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Hardness (Vickers)(HV) | 2,600 | HV | — | ||
Poisson's Ratio(ν) | 0.2100 | - | — | ||
Young's Modulus(E) | 59,465.5 | ksi | — |
3 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 5,119.9 | °F | — | ||
Specific Heat Capacity(Cp) | 0.1648 | BTU/(lb·°F) | — | ||
Thermal Conductivity(k) | 214.9 | BTU/(hr·ft·°F) | Measured | ||
Thermal Conductivity vs Temperature(k(T))3 entries | Curve (7 pts) | BTU/(hr·ft·°F) | — | ||
| ↳ | Curve (14 pts) | BTU/(hr·ft·°F) | Measured · single crystal | ||
| ↳ | Curve (21 pts) | BTU/(hr·ft·°F) | Measured · CVD polycrystalline (β-SiC) | ||
Coefficient of Thermal Expansion(α (CTE)) | 2.222 | µin/in·°F | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1160 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.260 | eV | — | ||
| ↳ | 2.495 | eV | DFT · OptB88vdW | ||
| ↳ | 3.232 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.700 | - | — | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.009 | - | DFT · OptB88vdW | ||
| ↳ | 6.086 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.4700 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.353 | me | DFT · OptB88vdW · 27°C | ||
Thermoelectric Power Factor(PF)2 entries | 0.00346 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00181 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -233.4 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 291.4 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 2.660 | % | DFT · TBmBJ |
2 interactive curves for this material
Stress-strain, S-N fatigue and environmental knockdown curves are free with an account.
Create free account| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Refractive Index vs Wavelength(n(λ))2 entries | Curve (101 pts) | - | Measured · ordinary ray | ||
| ↳ | Curve (101 pts) | - | Measured · extraordinary ray |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3794 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data