Silicon Carbide (SiC)
VerifiedsemiconductorSilicon carbide (SiC) is a ceramic compound combining silicon and carbon in a 1:1 ratio, engineered as a wide-bandgap semiconductor with exceptional hardness and thermal stability. It is widely deployed in high-temperature power electronics (MOSFETs and Schottky diodes), abrasive applications, refractories for furnace linings, and emerging automotive/renewable energy inverters where its superior thermal conductivity and thermal shock resistance outperform traditional silicon. Engineers select SiC over conventional semiconductors when operating environments exceed 200°C or when high switching frequencies and power density are critical, though cost and manufacturing maturity remain considerations relative to established Si technology.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Hardness (Vickers)(HV) | 2,600 | HV | — | ||
Poisson's Ratio(ν) | 0.2100 | - | — | ||
Young's Modulus(E) | 59,465.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Melting Point / Solidus(Tm) | 5,119.9 | °F | — | ||
Specific Heat Capacity(Cp) | 0.1648 | BTU/(lb·°F) | — | ||
Thermal Conductivity(k) | 213.8 | BTU/(hr·ft·°F) | — | ||
Thermal Conductivity vs Temperature(k(T)) | Curve (7 pts) | BTU/(hr·ft·°F) | — | ||
Coefficient of Thermal Expansion(α (CTE)) | 2.222 | µin/in·°F | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1160 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.260 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 9.700 | - | — |