ScHfO2N

semiconductor

· ScHfO2N

ScHfO2N is an experimental oxynitride ceramic compound combining scandium, hafnium, oxygen, and nitrogen phases. This material belongs to the family of high-entropy and refractory oxynitrides under investigation for advanced semiconductor and thermal barrier applications where traditional oxides reach performance limits. Research into such compositions focuses on achieving improved thermal stability, enhanced dielectric properties, and potential use in next-generation gate dielectrics or high-temperature structural applications where both chemical and thermal robustness are critical.

advanced gate dielectricsthermal barrier coatingshigh-temperature ceramicssemiconductor researchrefractory materials developmentexperimental thin films

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	—
Magnetic Moment(μB)	-0.000223	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.4400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScHfO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control