ScHfO2N
semiconductor· ScHfO2N
ScHfO2N is an experimental oxynitride ceramic compound combining scandium, hafnium, oxygen, and nitrogen phases. This material belongs to the family of high-entropy and refractory oxynitrides under investigation for advanced semiconductor and thermal barrier applications where traditional oxides reach performance limits. Research into such compositions focuses on achieving improved thermal stability, enhanced dielectric properties, and potential use in next-generation gate dielectrics or high-temperature structural applications where both chemical and thermal robustness are critical.
advanced gate dielectricsthermal barrier coatingshigh-temperature ceramicssemiconductor researchrefractory materials developmentexperimental thin films
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.