ScGeO2N

semiconductor

· ScGeO2N

ScGeO₂N is an experimental oxynitride semiconductor compound combining scandium, germanium, oxygen, and nitrogen. This material belongs to the emerging class of wide-bandgap semiconductors and oxynitrides, currently studied primarily in research settings for advanced optoelectronic and power electronic applications. The oxynitride chemistry offers potential advantages in thermal stability and electronic properties compared to conventional oxide or nitride semiconductors, though industrial adoption remains limited pending demonstration of manufacturing scalability and cost-effectiveness.

wide-bandgap semiconductor researchoptoelectronic device developmentpower electronics prototypinghigh-temperature semiconductor applicationsphotocatalysis research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.400	eV	—
Magnetic Moment(μB)	-0.000359	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6600	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ScGeO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control