ScGeO2N
semiconductor· ScGeO2N
ScGeO₂N is an experimental oxynitride semiconductor compound combining scandium, germanium, oxygen, and nitrogen. This material belongs to the emerging class of wide-bandgap semiconductors and oxynitrides, currently studied primarily in research settings for advanced optoelectronic and power electronic applications. The oxynitride chemistry offers potential advantages in thermal stability and electronic properties compared to conventional oxide or nitride semiconductors, though industrial adoption remains limited pending demonstration of manufacturing scalability and cost-effectiveness.
wide-bandgap semiconductor researchoptoelectronic device developmentpower electronics prototypinghigh-temperature semiconductor applicationsphotocatalysis research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.