Sb₅IO₇ is an antimony iodine oxide semiconductor compound combining group 15 and halogen elements in a mixed-valence structure. This is a research-phase material primarily investigated for photocatalytic and optoelectronic applications, particularly in contexts where bismuth-free alternatives to traditional semiconductors are desirable. The material belongs to an emerging class of layered halide compounds being explored for visible-light photocatalysis, water treatment, and potentially thin-film electronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2007 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.950 | eV | — | ||
| ↳ | 2.460 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 16.43 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.1726 | C/m² | — | ||
Seebeck Coefficient(S) | -209.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01260 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.329 | eV/atom | — |