ReSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of rhenium and selenium atoms arranged in a stacked structure. This material is primarily of research interest for next-generation electronics and optoelectronics, where its layer-dependent properties enable applications in 2D device engineering, field-effect transistors, and photodetectors as an alternative to more established TMDs like MoS₂. The relatively weak interlayer bonding makes it amenable to mechanical exfoliation into ultrathin films, positioning it as a candidate material for flexible electronics and van der Waals heterostructure engineering.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.10 | GPa | — | ||
Exfoliation Energy(Eexf) | 75.10 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2500 | - | — | ||
Shear Modulus(G) | 42.76 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.831 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.150 | eV | — | ||
| ↳ | 1.069 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 12.11 | - | — | ||
| ↳ | 32.96 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -345.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3798 | eV/atom | — |