ReSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of rhenium and selenium atoms arranged in a stacked structure. This material is primarily of research interest for next-generation electronics and optoelectronics, where its layer-dependent properties enable applications in 2D device engineering, field-effect transistors, and photodetectors as an alternative to more established TMDs like MoS₂. The relatively weak interlayer bonding makes it amenable to mechanical exfoliation into ultrathin films, positioning it as a candidate material for flexible electronics and van der Waals heterostructure engineering.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.10 | GPa | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 75.10 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 42.76 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.831 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.069 | eV | DFT · OptB88vdW | ||
| ↳ | 1.150 | eV | Measured | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 32.96 | - | DFT · OptB88vdW | ||
| ↳ | 12.11 | - | DFT · PBE | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 15.03 | - | DFT · OptB88vdW | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 1.993 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.787 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00139 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00150 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -345.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 320.1 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.970 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3798 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data