Rb3Os1 is an intermetallic compound combining rubidium and osmium, classified as a semiconductor material that exists primarily in research and experimental contexts rather than established commercial production. This compound represents the family of rare-earth and precious-metal intermetallics being investigated for advanced electronic and photonic applications where conventional semiconductors reach performance limits. The material's potential lies in high-temperature electronics, quantum computing platforms, and specialized sensing applications, though practical engineering adoption remains limited pending further development of synthesis methods and device integration techniques.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12.68 range 12.67–12.69median of 2 measurements | GPa | — | ||
Shear Modulus(G) | 6.476 range 6.460–6.493median of 2 measurements | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04580 range 0.00340–0.08820median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.205 | eV/atom | — |