Rb3Os1 is an intermetallic compound combining rubidium and osmium, classified as a semiconductor material that exists primarily in research and experimental contexts rather than established commercial production. This compound represents the family of rare-earth and precious-metal intermetallics being investigated for advanced electronic and photonic applications where conventional semiconductors reach performance limits. The material's potential lies in high-temperature electronics, quantum computing platforms, and specialized sensing applications, though practical engineering adoption remains limited pending further development of synthesis methods and device integration techniques.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,838.8 range 1,837.2–1,840.4median of 2 measurements | ksi | — | ||
Shear Modulus(G) | 939.3 range 936.9–941.7median of 2 measurements | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.04580 range 0.00340–0.08820median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.205 | eV/atom | — |