PtTaO₂N is a mixed-metal oxynitride semiconductor combining platinum, tantalum, oxygen, and nitrogen in a single crystalline phase. This is a research-stage material developed for photocatalytic and electrochemical applications, representing the broader class of transition-metal oxynitrides that offer tunable band gaps and enhanced charge carrier properties compared to conventional oxides. The material shows promise in visible-light-driven catalysis and water-splitting, where the nitrogen incorporation narrows the band gap relative to pure tantalum oxide, enabling absorption of longer wavelengths while platinum provides catalytic surface sites.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7000 | eV | — | ||
Magnetic Moment(μB) | -0.000220 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.6200 | eV/atom | — |