PtTaO2N
semiconductor· PtTaO2N
PtTaO₂N is a mixed-metal oxynitride semiconductor combining platinum, tantalum, oxygen, and nitrogen in a single crystalline phase. This is a research-stage material developed for photocatalytic and electrochemical applications, representing the broader class of transition-metal oxynitrides that offer tunable band gaps and enhanced charge carrier properties compared to conventional oxides. The material shows promise in visible-light-driven catalysis and water-splitting, where the nitrogen incorporation narrows the band gap relative to pure tantalum oxide, enabling absorption of longer wavelengths while platinum provides catalytic surface sites.
photocatalytic water splittingvisible-light photocatalysishydrogen generationelectrochemical energy conversionenvironmental remediation catalystsresearch semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.