Lead sulfide (PbS) is a narrow-bandgap semiconductor compound with a rock-salt crystal structure, valued for its sensitivity to infrared radiation. It is primarily used in infrared detectors and thermal imaging systems where its ability to respond to heat signatures is essential, as well as in photovoltaic and optoelectronic devices. Engineers select PbS over wider-bandgap alternatives when infrared detection in the mid-wave to long-wave region is required, and it remains important in niche applications despite health and environmental concerns associated with lead-based materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 51.96 | GPa | — | ||
| ↳ | 36.81 | GPa | — | ||
Compressive Strength(σc) | 9.387 | MPa | — | ||
Elongation at Break(εf) | 190.5 | - | — | ||
Exfoliation Energy(Eexf) | 187.6 | meV/atom | — | ||
Flexural Strength (MOR)(σf) | 34.34 | MPa | — | ||
Hardness (Vickers)(HV) | 115.8 | HV | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G)2 entries | 29.40 | GPa | — | ||
| ↳ | 20.59 | GPa | — | ||
Ultimate Tensile Strength(σUTS) | 34.79 | MPa | — | ||
Young's Modulus(E) | 547.7 | MPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Glass Transition Temperature(Tg) | 243.1 | K | — | ||
Melting Point / Solidus(Tm) | 386.8 | K | — | ||
Maximum Service Temperature(Tmax) | 634.1 | K | — | ||
Thermal Conductivity(k) | 0.6275 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.218 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.4100 | eV | — | ||
| ↳ | 0.8951 | eV | — | ||
| ↳ | 0.5780 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 68.37 | - | — | ||
| ↳ | 75.89 range 17.20–134.6median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 4.344 | C/m² | — | ||
| ↳ | 0.5237 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -240.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07980 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.5094 | eV/atom | — | ||
| ↳ | -0.5762 | eV/atom | — | ||
Refractive Index(n) | 1.642 | - | — |