O2 Cu1 In1

semiconductor

· O2 Cu1 In1

O₂Cu₁In₁ is a ternary oxide semiconductor compound combining copper and indium in a 1:1 ratio with oxygen. This material belongs to the family of mixed-metal oxides and represents an experimental or emerging composition that combines the electronic properties of copper and indium oxides, potentially offering tunable bandgap characteristics for optoelectronic applications. Engineers might evaluate this compound for thin-film transistor (TFT) devices, photovoltaic absorber layers, or transparent conducting oxide applications where the copper-indium combination could provide improved charge transport or optical properties compared to single-metal oxide alternatives.

thin-film transistorsphotovoltaic devicestransparent conducting oxidesoptoelectronic researchsemiconductor device engineeringemerging materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	132.3	GPa	—
Shear Modulus(G)	43.42	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3844	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.270	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

O2 Cu1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control