O2 Cu1 In1

semiconductor
· O2 Cu1 In1

O₂Cu₁In₁ is a ternary oxide semiconductor compound combining copper and indium in a 1:1 ratio with oxygen. This material belongs to the family of mixed-metal oxides and represents an experimental or emerging composition that combines the electronic properties of copper and indium oxides, potentially offering tunable bandgap characteristics for optoelectronic applications. Engineers might evaluate this compound for thin-film transistor (TFT) devices, photovoltaic absorber layers, or transparent conducting oxide applications where the copper-indium combination could provide improved charge transport or optical properties compared to single-metal oxide alternatives.

thin-film transistorsphotovoltaic devicestransparent conducting oxidesoptoelectronic researchsemiconductor device engineeringemerging materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
ksi
Shear Modulus(G)
ksi
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.