NbSe2
semiconductorNbSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of niobium and selenium, belonging to the family of two-dimensional materials that can be mechanically exfoliated into atomically thin sheets. It is primarily a research and development material studied for next-generation electronic and optoelectronic devices, including flexible transistors, photodetectors, and integrated circuits where its layer-dependent bandgap and high charge carrier mobility offer advantages over conventional silicon at nanoscale dimensions. Engineers consider NbSe₂ when designing ultra-thin devices, energy storage systems, or catalytic applications where the material's weak van der Waals interlayer bonding enables integration into heterogeneous device stacks.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 22.26 | GPa | — | ||
| ↳ | 49.92 | GPa | — | ||
Exfoliation Energy(Eexf) | 98.27 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.1400 | - | — | ||
Shear Modulus(G)2 entries | 13.38 | GPa | — | ||
| ↳ | 27.69 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.074 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.400 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 129.8 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | 21.97 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01460 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8528 | eV/atom | — |