NbSe2 — Properties & Data | MatWorld

NbSe2

Name: NbSe2
Brand: MatWorld

semiconductor

· NbSe2

NbSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of niobium and selenium, belonging to the family of two-dimensional materials that can be mechanically exfoliated into atomically thin sheets. It is primarily a research and development material studied for next-generation electronic and optoelectronic devices, including flexible transistors, photodetectors, and integrated circuits where its layer-dependent bandgap and high charge carrier mobility offer advantages over conventional silicon at nanoscale dimensions. Engineers consider NbSe₂ when designing ultra-thin devices, energy storage systems, or catalytic applications where the material's weak van der Waals interlayer bonding enables integration into heterogeneous device stacks.

2D semiconductor devicesflexible and wearable electronicsphotodetectors and optoelectronicsfield-effect transistorsenergy storage (batteries/supercapacitors)catalytic applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions
Bulk Modulus(K)2 entries	3,227.9	ksi	DFT
↳	7,240.3	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	98.27	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.1400	-	DFT · OptB88vdW
Shear Modulus(G)2 entries	1,939.9	ksi	DFT
↳	4,016.1	ksi	DFT · OptB88vdW

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2194	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.400	eV	Measured
↳	0.000	eV	DFT · OptB88vdW
↳	0.000	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	129.8	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00151	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00154	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	16.99	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	16.06	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.01460	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.8528	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

NbSe2

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Physical Properties

Electrical Properties

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