NbSe2

NbSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of niobium and selenium, belonging to the family of two-dimensional materials that can be mechanically exfoliated into atomically thin sheets. It is primarily a research and development material studied for next-generation electronic and optoelectronic devices, including flexible transistors, photodetectors, and integrated circuits where its layer-dependent bandgap and high charge carrier mobility offer advantages over conventional silicon at nanoscale dimensions. Engineers consider NbSe₂ when designing ultra-thin devices, energy storage systems, or catalytic applications where the material's weak van der Waals interlayer bonding enables integration into heterogeneous device stacks.