NbSe2
semiconductorNbSe₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of niobium and selenium, belonging to the family of two-dimensional materials that can be mechanically exfoliated into atomically thin sheets. It is primarily a research and development material studied for next-generation electronic and optoelectronic devices, including flexible transistors, photodetectors, and integrated circuits where its layer-dependent bandgap and high charge carrier mobility offer advantages over conventional silicon at nanoscale dimensions. Engineers consider NbSe₂ when designing ultra-thin devices, energy storage systems, or catalytic applications where the material's weak van der Waals interlayer bonding enables integration into heterogeneous device stacks.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G)2 entries | — | Pa | — | — | |
| ↳ | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr) | — | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |