Nb1 Se2

Nb₁Se₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of niobium and selenium, representing an emerging class of two-dimensional materials with potential for next-generation electronic and optoelectronic devices. While primarily a research material rather than an established commercial compound, this TMD family is being investigated for applications in flexible electronics, photodetectors, and valley-spin devices due to its tunable bandgap and strong light-matter interactions. Engineers evaluating Nb₁Se₂ should recognize it as a candidate material for prototyping and experimental systems where the unique properties of layered semiconductors—such as direct bandgap in monolayer form and mechanical flexibility—offer advantages over conventional silicon or gallium arsenide in specific niche applications.