Nb1 Se2

semiconductor
· Nb1 Se2

Nb₁Se₂ is a layered transition metal dichalcogenide (TMD) semiconductor composed of niobium and selenium, representing an emerging class of two-dimensional materials with potential for next-generation electronic and optoelectronic devices. While primarily a research material rather than an established commercial compound, this TMD family is being investigated for applications in flexible electronics, photodetectors, and valley-spin devices due to its tunable bandgap and strong light-matter interactions. Engineers evaluating Nb₁Se₂ should recognize it as a candidate material for prototyping and experimental systems where the unique properties of layered semiconductors—such as direct bandgap in monolayer form and mechanical flexibility—offer advantages over conventional silicon or gallium arsenide in specific niche applications.

flexible electronics and wearablesphotodetectors and image sensorsresearch and development prototypingtwo-dimensional material researchoptoelectronic devicesvalley-spintronics applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Bulk Modulus(K)
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ksi——
Shear Modulus(G)
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ksi——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.
Nb1 Se2 — Properties & Data | MatWorld