Na2In2GeS6 is a quaternary chalcogenide semiconductor compound composed of sodium, indium, germanium, and sulfur. This material belongs to the family of sulfide semiconductors and is primarily studied in research contexts for its potential in optoelectronic and photonic applications due to its direct bandgap characteristics and non-centrosymmetric crystal structure. The compound is notable for applications requiring wide transparency windows in the infrared spectrum and nonlinear optical effects, making it of interest as an alternative to conventional semiconductors in specialized photonic devices where traditional materials (silicon, gallium arsenide) have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.209 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.170 | eV | — | ||
| ↳ | 2.084 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8193 | eV/atom | — |