Na2In2GeS6

semiconductor

· Na2In2GeS6

Na2In2GeS6 is a quaternary chalcogenide semiconductor compound composed of sodium, indium, germanium, and sulfur. This material belongs to the family of sulfide semiconductors and is primarily studied in research contexts for its potential in optoelectronic and photonic applications due to its direct bandgap characteristics and non-centrosymmetric crystal structure. The compound is notable for applications requiring wide transparency windows in the infrared spectrum and nonlinear optical effects, making it of interest as an alternative to conventional semiconductors in specialized photonic devices where traditional materials (silicon, gallium arsenide) have limitations.

infrared optics and photonicsnonlinear optical devicesresearch-phase semiconductorswide-bandgap applicationsfrequency conversion materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1159	lb/in³	—

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Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.170	eV	—
↳	2.084	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.8193	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Na2In2GeS6

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control