Na2Ga2GeS6

semiconductor

· Na2Ga2GeS6

Na2Ga2GeS6 is a quaternary chalcogenide semiconductor composed of sodium, gallium, germanium, and sulfur elements. This material belongs to the family of sulfide-based semiconductors and is primarily investigated in research contexts for photonic and optoelectronic applications where wide bandgap semiconductors with tunable properties are advantageous. Its mixed-metal composition and layered chalcogenide structure make it of interest for nonlinear optical devices, solid-state ionics, and potential photovoltaic or radiation detection applications where conventional III-V or II-VI semiconductors may be inadequate.

nonlinear optical materialsresearch photonicssolid-state ion conductorsexperimental optoelectronicschalcogenide deviceswide-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	2.874	kg/m³	—

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Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.290	eV	—
↳	2.487	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.8890	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Na2Ga2GeS6

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control