Na2Ga2GeS6 is a quaternary chalcogenide semiconductor composed of sodium, gallium, germanium, and sulfur elements. This material belongs to the family of sulfide-based semiconductors and is primarily investigated in research contexts for photonic and optoelectronic applications where wide bandgap semiconductors with tunable properties are advantageous. Its mixed-metal composition and layered chalcogenide structure make it of interest for nonlinear optical devices, solid-state ionics, and potential photovoltaic or radiation detection applications where conventional III-V or II-VI semiconductors may be inadequate.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1038 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.290 | eV | Measured | ||
| ↳ | 2.487 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.8890 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data