Mo3 Se2 S4

semiconductor

· Mo3 Se2 S4

Mo3Se2S4 is a mixed-anion layered transition metal chalcogenide semiconductor combining molybdenum with selenium and sulfur in a single phase. This is primarily a research material being investigated for optoelectronic and energy storage applications, where the tunable bandgap and layered structure offer potential advantages over conventional binary chalcogenides (MoS2, MoSe2) for photocatalysis, photovoltaics, and electrochemical devices. The material's appeal lies in its chemical flexibility—substituting or blending chalcogenide anions allows bandgap engineering and improved carrier transport compared to single-chalcogenide analogues.

photocatalytic water splittingthin-film photovoltaics (research)electrochemical energy storageoptoelectronic devices (emerging)bandgap engineering applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.8311	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8270	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo3 Se2 S4

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control