Mo3Se2S4 is a mixed-anion layered transition metal chalcogenide semiconductor combining molybdenum with selenium and sulfur in a single phase. This is primarily a research material being investigated for optoelectronic and energy storage applications, where the tunable bandgap and layered structure offer potential advantages over conventional binary chalcogenides (MoS2, MoSe2) for photocatalysis, photovoltaics, and electrochemical devices. The material's appeal lies in its chemical flexibility—substituting or blending chalcogenide anions allows bandgap engineering and improved carrier transport compared to single-chalcogenide analogues.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8311 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8270 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data