Mo1 W1 O6

semiconductor

· Mo1 W1 O6

Mo1W1O6 is a mixed-metal oxide semiconductor combining molybdenum and tungsten in a 1:1 ratio with oxygen, belonging to the family of transition-metal oxides with layered or framework structures. This compound is primarily of research and developmental interest for applications requiring tunable electronic properties, photocatalytic activity, or mixed-valence charge transport; it represents an emerging material class that leverages the distinct electrochemical behavior of molybdenum and tungsten oxides to achieve performance characteristics distinct from single-metal analogs.

Photocatalytic water splittingEnergy storage devicesOptoelectronic sensorsElectrochemical catalysisResearch semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	142.3	GPa	—
Shear Modulus(G)	34.81	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.042	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.232	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mo1 W1 O6

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control