Mo1W1O6 is a mixed-metal oxide semiconductor combining molybdenum and tungsten in a 1:1 ratio with oxygen, belonging to the family of transition-metal oxides with layered or framework structures. This compound is primarily of research and developmental interest for applications requiring tunable electronic properties, photocatalytic activity, or mixed-valence charge transport; it represents an emerging material class that leverages the distinct electrochemical behavior of molybdenum and tungsten oxides to achieve performance characteristics distinct from single-metal analogs.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,640.5 | ksi | — | ||
Shear Modulus(G) | 5,048.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.042 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.232 | eV/atom | — |