Magnesium telluride (MgTe) is a II-VI semiconductor compound combining a lightweight alkaline earth metal with a chalcogen element, forming a cubic crystal structure with moderate band gap characteristics. It is primarily investigated in research and specialized optoelectronic applications, particularly for infrared detection, photovoltaic devices, and high-energy radiation sensing where its wide bandgap and stable crystal structure offer advantages over more common semiconductors. As an emerging material rather than an established industrial standard, MgTe appeals to developers of next-generation sensors and space-qualified electronics seeking alternatives to traditional III-V or II-VI compounds (such as CdTe or GaAs) in niche performance windows.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 32.65 | GPa | DFT | ||
| ↳ | 36.67 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3400 | - | DFT · OptB88vdW | ||
Shear Modulus(G)2 entries | 12.29 | GPa | DFT | ||
| ↳ | 13.90 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 14.70 | W/(m·K) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.735 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.600 | eV | Measured | ||
| ↳ | 2.495 | eV | DFT · OptB88vdW | ||
| ↳ | 3.494 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 7.856 | - | DFT · OptB88vdW | ||
| ↳ | 7.980 | - | DFT · PBE | ||
| ↳ | 16.17 range 9.136–23.21median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 5.840 | - | DFT · OptB88vdW | ||
| ↳ | 4.787 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.2000 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.260 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.4098 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.08940 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000588 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00322 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -73.22 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 358.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 1.310 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.9519 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -1.084 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data