Mg1 Sn1 O3
semiconductorMg₁Sn₁O₃ is a ternary oxide semiconductor compound combining magnesium, tin, and oxygen—a composition that bridges conventional metal oxides and emerging functional materials. This material remains primarily in the research phase, investigated for potential applications in optoelectronics, photocatalysis, and next-generation semiconductor devices where the combined properties of magnesium and tin oxides may offer tunable bandgap or enhanced catalytic activity. Engineers exploring alternative semiconductors for visible-light photocatalysis, gas sensing, or thin-film electronics may find this compound relevant as it represents the broader class of complex oxides being developed to overcome limitations of single-element oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |