Mg1 Sn1 O3

semiconductor

· Mg1 Sn1 O3

Mg₁Sn₁O₃ is a ternary oxide semiconductor compound combining magnesium, tin, and oxygen—a composition that bridges conventional metal oxides and emerging functional materials. This material remains primarily in the research phase, investigated for potential applications in optoelectronics, photocatalysis, and next-generation semiconductor devices where the combined properties of magnesium and tin oxides may offer tunable bandgap or enhanced catalytic activity. Engineers exploring alternative semiconductors for visible-light photocatalysis, gas sensing, or thin-film electronics may find this compound relevant as it represents the broader class of complex oxides being developed to overcome limitations of single-element oxide semiconductors.

experimental semiconductor researchphotocatalytic applicationsoptical materials developmentthin-film electronicsgas sensing devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	23,273.8	ksi	—
Shear Modulus(G)	11,075.1	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.176	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.615	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg1 Sn1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control