LaS1.86Se0.14

semiconductor

· LaS1.86Se0.14

LaS₁.₈₆Se₀.₁₄ is a mixed lanthanum chalcogenide semiconductor, combining sulfur and selenium anions in a single-phase compound. This is a research-phase material being investigated for its electronic and optoelectronic properties, particularly for applications requiring layered semiconductor structures or mixed-anion tuning of the band gap. The sulfur-selenium ratio allows controlled adjustment of electronic properties compared to pure lanthanum sulfide or selenide, making it relevant to exploratory work in photodetection, photocatalysis, and solid-state device applications.

photodetectors (experimental)photocatalytic materials (research)infrared optoelectronicssemiconducting thin filmsband gap engineeringrare-earth chalcogenide devices (emerging)

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.500	eV	—

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Regulatory Screening

Environmental

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LaS1.86Se0.14

Electrical Properties

Regulatory Screening

Environmental

Export Control