LaS1.86Se0.14
semiconductor· LaS1.86Se0.14
LaS₁.₈₆Se₀.₁₄ is a mixed lanthanum chalcogenide semiconductor, combining sulfur and selenium anions in a single-phase compound. This is a research-phase material being investigated for its electronic and optoelectronic properties, particularly for applications requiring layered semiconductor structures or mixed-anion tuning of the band gap. The sulfur-selenium ratio allows controlled adjustment of electronic properties compared to pure lanthanum sulfide or selenide, making it relevant to exploratory work in photodetection, photocatalysis, and solid-state device applications.
photodetectors (experimental)photocatalytic materials (research)infrared optoelectronicssemiconducting thin filmsband gap engineeringrare-earth chalcogenide devices (emerging)
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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