LaHfO2N
semiconductor· LaHfO2N
LaHfO2N is an experimental oxynitride semiconductor combining lanthanum, hafnium, oxygen, and nitrogen in a crystalline structure. This material belongs to the high-κ dielectric family and is primarily under investigation for advanced microelectronic gate dielectrics and metallurgical applications where superior insulating properties and thermal stability are required at the nanoscale. Compared to conventional SiO2 and early-generation high-κ oxides, oxynitride variants like LaHfO2N offer improved interface quality, reduced leakage current, and enhanced resistance to dopant diffusion—making it attractive for next-generation CMOS scaling and next-node semiconductor device development.
advanced gate dielectricsnanoscale CMOS deviceshigh-κ capacitorssemiconductor research & developmentmetal-oxide-semiconductor (MOS) structuresthermal barrier applications
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.