LaHfO2N

semiconductor

· LaHfO2N

LaHfO2N is an experimental oxynitride semiconductor combining lanthanum, hafnium, oxygen, and nitrogen in a crystalline structure. This material belongs to the high-κ dielectric family and is primarily under investigation for advanced microelectronic gate dielectrics and metallurgical applications where superior insulating properties and thermal stability are required at the nanoscale. Compared to conventional SiO2 and early-generation high-κ oxides, oxynitride variants like LaHfO2N offer improved interface quality, reduced leakage current, and enhanced resistance to dopant diffusion—making it attractive for next-generation CMOS scaling and next-node semiconductor device development.

advanced gate dielectricsnanoscale CMOS deviceshigh-κ capacitorssemiconductor research & developmentmetal-oxide-semiconductor (MOS) structuresthermal barrier applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.800	eV	—
Magnetic Moment(μB)	-0.000120	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.06000	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaHfO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control