LaGaO2S

semiconductor

· LaGaO2S

LaGaO2S is an oxysulfide semiconductor compound combining lanthanum, gallium, oxygen, and sulfur—a member of the rare-earth mixed-anion semiconductor family. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in photocatalysis, optoelectronics, and energy conversion where its bandgap and light absorption properties could offer advantages over conventional semiconductors.

photocatalytic water splittingvisible-light photocatalysisoptoelectronic devicesenvironmental remediationresearch photovoltaicshydrogen production

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.100	eV	—
Magnetic Moment(μB)	0.0000270	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.3400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

LaGaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control