LaGaO2S
semiconductor· LaGaO2S
LaGaO2S is an oxysulfide semiconductor compound combining lanthanum, gallium, oxygen, and sulfur—a member of the rare-earth mixed-anion semiconductor family. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in photocatalysis, optoelectronics, and energy conversion where its bandgap and light absorption properties could offer advantages over conventional semiconductors.
photocatalytic water splittingvisible-light photocatalysisoptoelectronic devicesenvironmental remediationresearch photovoltaicshydrogen production
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.