K8 Ba2 Ge6 O18

semiconductor

· K8 Ba2 Ge6 O18

K8Ba2Ge6O18 is an inorganic oxide semiconductor compound belonging to the germanate family, combining potassium, barium, and germanium oxides in a structured crystalline phase. This material is primarily of research and exploratory interest rather than established industrial production, with potential applications in photonic devices, scintillation detection systems, and solid-state electronic components where the unique bandgap and crystal structure could offer advantages over conventional semiconductors. The barium-germanate matrix is investigated for its optical and radiation-detection properties, making it relevant to researchers developing next-generation sensing materials and specialized optoelectronic devices.

scintillation detectorsradiation sensingoptical materials researchcrystalline semiconductorsphotonic devicesmaterials physics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.407	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.071	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K8 Ba2 Ge6 O18

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control