K8 Ba2 Ge6 O18
semiconductorK8Ba2Ge6O18 is an inorganic oxide semiconductor compound belonging to the germanate family, combining potassium, barium, and germanium oxides in a structured crystalline phase. This material is primarily of research and exploratory interest rather than established industrial production, with potential applications in photonic devices, scintillation detection systems, and solid-state electronic components where the unique bandgap and crystal structure could offer advantages over conventional semiconductors. The barium-germanate matrix is investigated for its optical and radiation-detection properties, making it relevant to researchers developing next-generation sensing materials and specialized optoelectronic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |