K3Ga3Ge7S20
semiconductor· K3Ga3Ge7S20
K3Ga3Ge7S20 is a mixed-metal chalcogenide semiconductor compound containing potassium, gallium, germanium, and sulfur. This is a research-phase material studied primarily for infrared (IR) photonics and nonlinear optical applications, where its wide bandgap and sulfide-based structure offer potential advantages for mid- to long-wave infrared transmission and frequency conversion. The material family is notable in specialized photonics contexts as an alternative to conventional II–VI semiconductors, though it remains largely in academic investigation rather than mature commercial production.
infrared opticsnonlinear optical devicesphotonics researchfrequency conversionoptical windowswide-bandgap semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
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