K3Ga3Ge7S20

semiconductor

· K3Ga3Ge7S20

K3Ga3Ge7S20 is a mixed-metal chalcogenide semiconductor compound containing potassium, gallium, germanium, and sulfur. This is a research-phase material studied primarily for infrared (IR) photonics and nonlinear optical applications, where its wide bandgap and sulfide-based structure offer potential advantages for mid- to long-wave infrared transmission and frequency conversion. The material family is notable in specialized photonics contexts as an alternative to conventional II–VI semiconductors, though it remains largely in academic investigation rather than mature commercial production.

infrared opticsnonlinear optical devicesphotonics researchfrequency conversionoptical windowswide-bandgap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.250	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

K3Ga3Ge7S20

Electrical Properties

Regulatory Screening

Environmental

Export Control