InSb2Se4Br — Properties & Data | MatWorld

InSb2Se4Br

Name: InSb2Se4Br
Brand: MatWorld

semiconductor

· InSb2Se4Br

InSb₂Se₄Br is a mixed-halide chalcogenide semiconductor compound combining indium, antimony, selenium, and bromine. This is primarily a research material within the broader family of layered chalcogenide semiconductors, synthesized for fundamental studies of electronic and optical properties rather than established commercial production. Interest centers on potential applications in infrared optics, photovoltaics, and quantum materials where halide substitution can tune bandgap and carrier transport; its anisotropic crystal structure and tunable composition make it attractive for exploring novel semiconducting behavior compared to more conventional III-V or II-VI materials.

infrared optics researchexperimental photovoltaicschalcogenide semiconductor physicsquantum material studiessolid-state device prototypingbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	5.540	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	1.035	eV	DFT · OptB88vdW
↳	1.665	eV	DFT · TBmBJ
↳	1.350	eV	Measured
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	14.94	-	DFT · OptB88vdW
↳	9.167	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.6067	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.603	me	DFT · OptB88vdW · 27°C
Thermoelectric Power Factor(PF)2 entries	0.00118	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000898	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-141.7	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	312.9	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	29.83	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.4290	eV/atom	DFT · OptB88vdW

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Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

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InSb2Se4Br

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