InSb₂Se₄Br is a mixed-halide chalcogenide semiconductor compound combining indium, antimony, selenium, and bromine. This is primarily a research material within the broader family of layered chalcogenide semiconductors, synthesized for fundamental studies of electronic and optical properties rather than established commercial production. Interest centers on potential applications in infrared optics, photovoltaics, and quantum materials where halide substitution can tune bandgap and carrier transport; its anisotropic crystal structure and tunable composition make it attractive for exploring novel semiconducting behavior compared to more conventional III-V or II-VI materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2001 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.350 | eV | — | ||
| ↳ | 1.035 | eV | — | ||
Seebeck Coefficient(S) | -141.7 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4290 | eV/atom | — |