InSb0.99As0.01

semiconductor

· InSb0.99As0.01

InSb₀.₉₉As₀.₀₁ is a narrow-bandgap III-V semiconductor alloy formed by introducing a small amount of arsenic into indium antimonide (InSb), creating a ternary compound with engineered electronic properties. This material belongs to the indium-based III-V family and is primarily of research and specialized device interest, as the arsenic incorporation modifies the bandgap and carrier behavior compared to pure InSb. It is explored in infrared detection, high-mobility device applications, and quantum well structures where the slight compositional adjustment enables bandgap engineering to optimize performance in specific frequency ranges or device architectures.

infrared photodetectorsmid-infrared sensorsquantum well heterostructureshigh-mobility transistorsbandgap engineering researchcompound semiconductor optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3500	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InSb0.99As0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control