InSb0.99As0.01
semiconductor· InSb0.99As0.01
InSb₀.₉₉As₀.₀₁ is a narrow-bandgap III-V semiconductor alloy formed by introducing a small amount of arsenic into indium antimonide (InSb), creating a ternary compound with engineered electronic properties. This material belongs to the indium-based III-V family and is primarily of research and specialized device interest, as the arsenic incorporation modifies the bandgap and carrier behavior compared to pure InSb. It is explored in infrared detection, high-mobility device applications, and quantum well structures where the slight compositional adjustment enables bandgap engineering to optimize performance in specific frequency ranges or device architectures.
infrared photodetectorsmid-infrared sensorsquantum well heterostructureshigh-mobility transistorsbandgap engineering researchcompound semiconductor optoelectronics
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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