InSb₀.₀₁As₀.₉₉ is a narrow-bandgap III-V semiconductor alloy composed primarily of InAs with a small antimony dopant, designed to fine-tune electronic and optical properties for infrared applications. This material is used in infrared detectors, thermal imaging systems, and high-sensitivity photodiodes where the bandgap engineering provided by antimony substitution enables detection in specific infrared wavelength ranges. The InAs-rich composition makes it particularly relevant for mid-wave and long-wave infrared sensing where competing materials like pure InAs or InSb may not provide optimal thermal or spectral performance.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1700 | eV | — |