InSb0.01As0.99
semiconductor· InSb0.01As0.99
InSb₀.₀₁As₀.₉₉ is a narrow-bandgap III-V semiconductor alloy composed primarily of InAs with a small antimony dopant, designed to fine-tune electronic and optical properties for infrared applications. This material is used in infrared detectors, thermal imaging systems, and high-sensitivity photodiodes where the bandgap engineering provided by antimony substitution enables detection in specific infrared wavelength ranges. The InAs-rich composition makes it particularly relevant for mid-wave and long-wave infrared sensing where competing materials like pure InAs or InSb may not provide optimal thermal or spectral performance.
infrared detectorsthermal imaging sensorsphotodiodesbandgap engineeringmilitary/aerospace sensingresearch semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.