InPS₄ is an indium phosphorus sulfide compound belonging to the family of III-V and mixed anion semiconductors. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and layered crystal structure offer potential advantages in light emission, detection, and energy conversion devices. InPS₄ represents an emerging alternative to more conventional semiconductors, with potential relevance in next-generation solar cells, photodetectors, and integrated photonics where tunable electronic properties and lattice engineering are valuable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,713 | ksi | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 2,248.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1120 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.120 | eV | — | ||
| ↳ | 2.329 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 11.40 | - | — | ||
| ↳ | 7.819 range 6.011–9.627median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.06830 | C/m² | — | ||
| ↳ | 0.5078 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -176.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4039 | eV/atom | — |