InNiAs
metalInNiAs is an intermetallic compound combining indium, nickel, and arsenic, belonging to the family of III-V semiconductor alloys and metal-compound materials. This material exists primarily in research and development contexts rather than widespread industrial production, with potential applications in high-temperature electronics, optoelectronics, and specialized semiconductor devices where the combination of these elements offers unique bandgap or thermal properties. InNiAs is notable within the indium-nickel-arsenic phase space for its potential to bridge metallic conductivity with semiconductor characteristics, making it of interest to researchers exploring advanced device architectures, though it remains less established than more conventional III-V compounds like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |