InNiAs

metal

· JVASP-75559· InNiAs

InNiAs is an intermetallic compound combining indium, nickel, and arsenic, belonging to the family of III-V semiconductor alloys and metal-compound materials. This material exists primarily in research and development contexts rather than widespread industrial production, with potential applications in high-temperature electronics, optoelectronics, and specialized semiconductor devices where the combination of these elements offers unique bandgap or thermal properties. InNiAs is notable within the indium-nickel-arsenic phase space for its potential to bridge metallic conductivity with semiconductor characteristics, making it of interest to researchers exploring advanced device architectures, though it remains less established than more conventional III-V compounds like GaAs or InP.

experimental semiconductorshigh-temperature electronicsoptoelectronic researchIII-V compound developmentintermetallic phase studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2408	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.6175	eV/atom	—
Formation Energy(ΔHf)	0.4005	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InNiAs

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control